Semiconductor structure
Number of patents in Portfolio can not be more than 2000
United States of America
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Feb 18, 2025
Grant Date -
Jul 11, 2024
app pub date -
Feb 18, 2024
filing date -
Feb 18, 2024
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Abstract
A method of manufacturing a semiconductor structure includes: forming a first oxide layer over a landing pad layer; forming a middle patterned dielectric layer over the first oxide layer; sequentially forming a second oxide layer and a top dielectric layer over the middle patterned dielectric layer; forming a trench through the top dielectric layer, the second oxide layer and the first oxide layer; conformally forming a bottom conductive layer in the trench; removing a portion of the top dielectric layer adjacent to the trench to expose a portion of the second oxide layer beneath the portion of the top dielectric layer; and performing an etching process to remove the second oxide layer and the first oxide layer. A semiconductor structure is also provided.
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