Dielectric material, device including the same, and method of preparing the dielectric material

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United States of America

PATENT NO 12230444
APP PUB NO 20230154679A1
SERIAL NO

17858552

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Abstract

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Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeong, Taewon Yongin-si, KR 13 26
Jo, Giyoung Suwon-si, KR 15 13
Jung, Doh Won Seoul, KR 37 60
Park, Hyeon Cheol Hwaseong-si, KR 68 215
Yang, Daejin Seoul, KR 25 89

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