Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12230359
APP PUB NO 20230189513A1
SERIAL NO

18164282

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Abstract

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A semiconductor device includes anti-fuse cells. The anti-fuse cells include a first active area, a first gate, a second gate, at least one first gate via, and at least one second gate via. The first gate and the second gate are separate from each other. The first gate and the second gate extend to cross over the first active area. The at least one first gate via is coupled to the first gate and disposed directly above the first active area. The at least one second gate via is coupled to the second gate. The first gate is coupled through the at least one first gate via to a first word line for receiving a first programming voltage, and the second gate is coupled through the at least one second gate via to a second word line for receiving a first reading voltage.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-77 R O C

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Meng-Sheng Hsinchu County, TW 213 200
Wang, Yih Hsinchu, TW 285 868
Wu, Fu-An Hsinchu, TW 43 282
Yang, Yao-Jen Hsinchu County, TW 66 70

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