Dual-precision analog memory cell and array
Number of patents in Portfolio can not be more than 2000
United States of America
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Feb 18, 2025
Grant Date -
Mar 28, 2024
app pub date -
Dec 4, 2023
filing date -
Dec 4, 2023
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Abstract
Dual-precision analog memory cells and arrays are provided. In some embodiments, a memory cell, comprises a non-volatile memory element having an input terminal and at least one output terminal; and a volatile memory element having a plurality of input terminals and an output terminal, wherein the output terminal of the volatile memory element is coupled to the input terminal of the non-volatile memory element, and wherein the volatile memory element comprises: a first transistor coupled between a first supply and a common node, and a second transistor coupled between a second supply and the common node; wherein the common node is coupled to the output terminal of the volatile memory element; and wherein gates of the first and second transistors are coupled to respective ones of the plurality of input terminals of the volatile memory element.
First Claim
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Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- HEFEI RELIANCE MEMORY LIMITED
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Lu, Zhichao | San Jose, US | 51 | 120 |
# of filed Patents : 51 Total Citations : 120 | |||
Zhao, Liang | Sunnyvale, US | 669 | 2735 |
# of filed Patents : 669 Total Citations : 2735 |
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