Phase shifter circuit, phase shifter layout and method of forming the same
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
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Feb 18, 2025
Grant Date -
Sep 22, 2022
app pub date -
Jun 6, 2022
filing date -
Jun 6, 2022
priority date (Note) -
In Force
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Importance

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Abstract
A phase shifter includes a first transistor and a second transistor. The first transistor includes a first gate terminal configured to receive a first voltage. The first transistor is configured to adjust at least a resistance or a first capacitance of the phase shifter responsive to the first voltage. The second transistor is coupled to the first transistor. The second transistor includes a second gate terminal configured to receive a second voltage. The second transistor is configured to adjust a second capacitance of the phase shifter responsive to the second voltage. The second gate terminal includes a first polysilicon portion and a second polysilicon portion extending in a first direction. The first polysilicon portion and the second polysilicon portion are positioned along opposite edges of an active region of the first transistor and the second transistor.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Ho-Hsiang | Hsinchu, TW | 72 | 956 |
# of filed Patents : 72 Total Citations : 956 | |||
Liao, Hsien-Yuan | Hsinchu, TW | 39 | 208 |
# of filed Patents : 39 Total Citations : 208 | |||
Lin, Chi-Hsien | Hsinchu, TW | 30 | 94 |
# of filed Patents : 30 Total Citations : 94 | |||
Lu, Ying-Ta | Hsinchu, TW | 54 | 312 |
# of filed Patents : 54 Total Citations : 312 | |||
Yeh, Tzu-Jin | Hsinchu, TW | 117 | 659 |
# of filed Patents : 117 Total Citations : 659 |
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- 0 Citation Count
- G06F Class
- 0 % this patent is cited more than
- < 1 Age
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