Reflective mask blank, reflective mask and method for manufacturing a semiconductor device
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United States of America
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Feb 18, 2025
Grant Date -
Mar 28, 2024
app pub date -
Dec 4, 2023
filing date -
Dec 4, 2023
priority date (Note) -
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Abstract
A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer that is formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer that is formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
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