Semiconductor structure, electrode structure and method of forming the same

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United States of America

PATENT NO 12225829
APP PUB NO 20230200254A1
SERIAL NO

18167907

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Abstract

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A semiconductor structure includes an Nth metal layer, a diffusion barrier layer over the Nth metal layer, a first deposition of bottom electrode material over the diffusion barrier layer, a second deposition of bottom electrode material over the first deposition of bottom electrode material, a magnetic tunneling junction (MTJ) layer over the second deposition of bottom electrode material, a top electrode over the MTJ layer; and an (N+1)th metal layer over the top electrode; wherein the diffusion barrier layer and the first deposition of bottom electrode material are laterally in contact with a dielectric layer, the first deposition of bottom electrode material spacing the diffusion barrier layer and the second deposition of bottom electrode material apart, and N is an integer greater than or equal to 1. An associated electrode structure and method are also disclosed.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Yao-Wen Taipei, TW 209 1504
Chou, Chung-Yen Hsinchu, TW 79 624
Liu, Shih-Chang Kaohsiung County, TW 311 2484
Sung, Fu-Ting Taoyuan County, TW 70 454

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