Semiconductor MRAM device and method

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12225734
APP PUB NO 20220359613A1
SERIAL NO

17815000

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Abstract

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A method includes depositing a first dielectric layer over a semiconductor substrate, depositing a first electrode layer over the first dielectric layer, etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode, depositing a Spin Orbit Torque (SOT) material on the first electrode and the second electrode, depositing Magnetic Tunnel Junction (MTJ) layers on the SOT material, depositing a second electrode layer on the MTJ layers, etching the SOT material to form a SOT layer extending from the first electrode to the second electrode, etching the MTJ layers to form an MTJ stack on the SOT layer, and etching the second electrode layer to form a top electrode on the MTJ stack.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Shy-Jay Jhudong Township, TW 142 982
Noguchi, Hiroki Hsinchu, TW 155 1361
Song, Mingyuan Hsinchu, TW 44 102

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