High frequency power amplification device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12224723
APP PUB NO 20240195369A1
SERIAL NO

18583589

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Importance

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Abstract

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A radio-frequency power amplifier device includes: a carrier amplifier semiconductor device and a peak amplifier semiconductor device on a multilayer submount substrate; a bias power supply semiconductor device; second radio-frequency signal wiring that transmits radio-frequency signal to the carrier amplifier semiconductor device and the peak amplifier semiconductor device; and carrier-amplifier bias power supply wiring that is wired in a third wiring layer and supplies a bias power supply voltage. The second radio-frequency signal wiring and the carrier-amplifier bias power supply wiring intersect in a plan view. The radio-frequency power amplifier device includes: a shield pattern that is located in a second wiring layer between a first wiring layer and the third wiring layer; and one or more connection vias disposed in an extension direction of the carrier-amplifier bias power supply wiring. The one or more connection vias are connected to the shield pattern.

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Patent Owner(s)

  • NUVOTON TECHNOLOGY CORPORATION JAPAN

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kamitani, Masatoshi Osaka, JP 23 393
Ohhashi, Kazuhiko Osaka, JP 5 4

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