Vertical power semiconductor device and manufacturing method

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12224317
APP PUB NO 20230352531A1
SERIAL NO

18220989

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Abstract

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A method of manufacturing a vertical power semiconductor device includes forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms, and forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks, wherein a first impurity peak of the plurality of impurity peaks is set a larger concentration than a second impurity peak of the plurality of impurity peaks, wherein the first impurity peak includes hydrogen and the second impurity peak includes helium.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jaeger, Christian Munich, DE 42 255
Jelinek, Moriz Villach, AT 35 166
Schloegl, Daniel Villach, AT 21 87
Schulze, Hans-Joachim Taufkirchen, DE 693 4306
Stoib, Benedikt Feldkirchen-Westerham, DE 10 3

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