Semiconductor device and manufacturing method thereof
Number of patents in Portfolio can not be more than 2000
United States of America
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Feb 11, 2025
Grant Date -
Oct 12, 2023
app pub date -
Apr 8, 2022
filing date -
Apr 8, 2022
priority date (Note) -
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Abstract
A manufacturing method of a semiconductor device includes forming a stack of first semiconductor layers and second semiconductor layers alternatively formed on top of one another, where a topmost layer of the stack is one of the second semiconductor layers; forming a patterned mask layer on the topmost layer of the stack; forming a trench in the stack based on the patterned mask layer to form a fin structure; forming a cladding layer extending along sidewalls of the fin structure; and removing the patterned mask layer and a portion of the cladding layer by performing a two-step etching process, where the portion of the cladding layer is removed to form cladding spacers having a concave top surface with a recess depth increasing from the sidewalls of the fin structure.
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