Semiconductor device and method

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12224204
APP PUB NO 20220367258A1
SERIAL NO

17873353

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Importance

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Abstract

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In an embodiment, a device includes: a semiconductor substrate; a first inter-layer dielectric (ILD) over the semiconductor substrate; a first conductive feature extending through the first ILD; a first etch stop layer over the first conductive feature and the first ILD, the first etch stop layer being a first dielectric material; a second ILD over the first etch stop layer; a contact having a first portion extending through the second ILD and a second portion extending through the first etch stop layer, the contact being physically and electrically coupled to the first conductive feature; and a first protective layer surrounding the second portion of the contact, the first portion of the contact being free from the first protective layer, the first protective layer being a second dielectric material, the second dielectric material being different from the first dielectric material.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Yu-Shih Tainan, TW 50 71
Yeh, Ming-Hsi Hsinchu, TW 153 567
Yeh, Po-Nan Hsinchu, TW 15 10

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