Method of manufacturing semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12224185
APP PUB NO 20230360930A1
SERIAL NO

18354190

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

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Patent Owner(s)

  • KOKUSAI ELECTRIC CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Itatani, Hideharu Toyama, JP 50 3034
Kikuchi, Toshiyuki Toyama, JP 82 514
Ohashi, Naofumi Toyama, JP 148 697

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