Method for forming semiconductor structure

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United States of America

PATENT NO 12222653
APP PUB NO 20210286269A1
SERIAL NO

17320754

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Abstract

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A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer, the resist layer includes an inorganic material. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes forming a modified layer over the resist layer, and the modified layer includes an auxiliary. The method includes performing an exposure process on the modified layer and the resist layer, and removing a portion of the modified layer and a first portion of the resist layer by a first developer. The first developer includes a ketone-based solvent having a substituted or unsubstituted C6-C7 cyclic ketone, an ester-based solvent having a formula (b), or a combination thereof.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ching-Yu Yuansun village, TW 578 7902
Lin, Chin-Hsiang Hsin-chu, TW 424 6439
Liu, Chen-Yu Kaohsiung, TW 124 1461
Weng, Ming-Hui New Taipei, TW 50 58
Zi, An-Ren Hsinchu, TW 91 210

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