Extreme ultraviolet mask and method of manufacturing the same
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United States of America
Stats
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Feb 11, 2025
Grant Date -
Nov 9, 2023
app pub date -
Jul 20, 2023
filing date -
Jul 20, 2023
priority date (Note) -
In Force
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Abstract
A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

First Claim
Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Lin, Yun-Yue | Hsinchu, TW | 77 | 363 |
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