Techniques for forming self-aligned memory structures

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United States of America

PATENT NO 12219883
SERIAL NO

17881274

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Abstract

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Methods, systems, and devices for techniques for forming self-aligned memory structures are described. Aspects include etching a layered assembly of materials including a first conductive material and a first sacrificial material to form a first set of channels along a first direction that creates a first set of sections. An insulative material may be deposited within each of the first set of channels and a second sacrificial material may be deposited onto the first set of sections and the insulating material. A second set of channels may be etched into the layered assembly of materials along a second direction that creates a second set of sections, where the second set of channels extend through the first and second sacrificial materials. Insulating material may be deposited in the second set of channels and the sacrificial materials removed leaving a cavity. A memory material may be deposited in the cavity.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fratin, Lorenzo Buccinasco, IT 90 465
Pellizzer, Fabio Boise, US 328 3376
Pirovano, Agostino Milan, IT 149 1272
Redaelli, Andrea Calolziocorte, IT 157 1129
Russell, Stephen W Boise, US 67 602
Tortorelli, Innocenzo Cernusco sul Naviglio, IT 164 1154

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