High-density memory device with planar thin film transistor (TFT) selector and methods for making the same
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United States of America
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Feb 4, 2025
Grant Date -
Oct 26, 2023
app pub date -
Jun 30, 2023
filing date -
Jun 30, 2023
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Abstract
A memory device and method of making the same, the memory device including bit lines disposed on a substrate; memory cells disposed on the bit lines; a first dielectric layer disposed on the substrate, surrounding the bit lines and the memory cells; a second dielectric layer disposed on the first dielectric layer; thin film transistors (TFTs) embedded in the second dielectric layer and configured to selectively provide electric power to corresponding memory cells, the TFTs comprising drain lines disposed on the memory cells, source lines disposed on the first dielectric layer, and selector layers electrically connected to the source lines and the drain lines; and word lines disposed on the second dielectric layer and electrically connected to the TFTs.
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