Semiconductor diode and method of manufacturing such a diode

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12218254
APP PUB NO 20220037538A1
SERIAL NO

17381043

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Abstract

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A semiconductor diode, including: a first doped semiconductor region of a first conductivity type; a second doped semiconductor region of a second conductivity type opposite to the first conductivity type, arranged on top of and in contact with the upper surface of the first semiconductor region; a first conductive region arranged on top of and in contact with the upper surface of the second semiconductor region, the first conductive region comprising a through opening opposite a portion of the second semiconductor region; a second conductive region made of a material different from that of the first conductive region, coating the upper surface of the second semiconductor region opposite said opening; a cavity extending through the second conductive region and through the second semiconductor region opposite a portion of said opening; a dielectric region coating the lateral walls and the bottom of the cavity; a third conductive region coating the dielectric region on the lateral walls and at the bottom of the cavity, the third conductive region being further electrically in contact with the first and second conductive regions.

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Patent Owner(s)

  • COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Buckley, Julien Grenoble, FR 27 40

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