Semiconductor structure with source and drain electrode embedded within semiconductor layer and manufacturing method thereof
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United States of America
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Feb 4, 2025
Grant Date -
Mar 2, 2023
app pub date -
Aug 30, 2021
filing date -
Aug 30, 2021
priority date (Note) -
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Abstract
A semiconductor structure and a method for forming the semiconductor structure are disclosed. The semiconductor structure includes a dielectric layer and a transistor. The transistor is at least partially disposed in the dielectric layer. The transistor includes a gate electrode, a gate dielectric layer, a source electrode, a drain electrode and a semiconductor layer. The gate dielectric layer is disposed over the gate electrode. The source electrode and the drain electrode are disposed over the gate dielectric layer and contact the gate dielectric layer. The semiconductor layer is disposed over the gate dielectric layer.
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