Oxide semiconductor transistor structure in 3-d device and methods for forming the same

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United States of America

PATENT NO 12218250
APP PUB NO 20230327024A1
SERIAL NO

18334496

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Abstract

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A transistor including a channel layer including an oxide semiconductor material and methods of making the same. The transistor includes a channel layer having a first oxide semiconductor layer having a first oxygen concentration, a second oxide semiconductor layer having a second oxygen concentration and a third oxide semiconductor layer having a third oxygen concentration. The second oxide semiconductor layer is located between the first semiconductor oxide layer and the third oxide semiconductor layer. The second oxygen concentration is lower than the first oxygen concentration and the third oxygen concentration.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiang, Kuo-Chang Hsinchu, TW 64 123
Jiang, Yu-Wei Hsinchu, TW 86 299
Lai, Sheng-Chih Hsinchu, TW 126 509
Murray, Neil Quinn Hsinchu, TW 12 0
Sun, Hung-Chang Kaohsiung, TW 60 114
Yang, Feng-Cheng Zhudong Township, TW 256 877
Yang, TsuChing Taipei, TW 38 67

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