Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process
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United States of America
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Feb 4, 2025
Grant Date -
Mar 4, 2021
app pub date -
Oct 27, 2020
filing date -
Oct 27, 2020
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Abstract
A semiconductor device is provided. The semiconductor device includes a plurality of channel layers stacked over a semiconductor substrate and spaced apart from one another, a source/drain structure adjoining the plurality of channel layers, a gate structure wrapping around the plurality of channel layers, and a first inner spacer between the gate structure and the source/drain structure and between the plurality of channel layers. The first inner spacer is made of an oxide of a semiconductor material.
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