Source/drain silicide for multigate device performance and method of fabricating thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12218214
APP PUB NO 20220336614A1
SERIAL NO

17231925

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.

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First Claim

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, Jon-Hsu New Taipei, TW 38 402
Hsieh, Wen-Hsing Hsinchu, TW 88 1240
Wang, Chih-Ching Kinmen County, TW 60 272
Wu, Chung-Wei Hsin-Chu County, TW 71 96
Wu, Zhiqiang Hsinchu County, TW 362 5279
Yang, Chung-I Hsinchu, TW 12 2

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