Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12218210
APP PUB NO 20240136418A1
SERIAL NO

18403495

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Abstract

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A device includes an active region, a gate structure, a source/drain epitaxial structure, an epitaxial layer, a metal alloy layer, a contact, and a contact etch stop layer. The gate structure is across the active region. The source/drain epitaxial structure is over the active region and adjacent the gate structure. The epitaxial layer is over the source/drain epitaxial structure. The metal alloy layer is over the epitaxial layer. The contact is over the metal alloy layer. The contact etch stop layer lines sidewalls of the source/drain epitaxial structure. The metal alloy layer is spaced apart from the contact etch stop layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Shih-Cheng New Taipei, TW 114 452
Lin, Chun-Hsiung Hsinchu County, TW 118 1300
Wang, Chih-Hao Hsinchu County, TW 1232 8869

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