Semiconductor structure and method for forming the same

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United States of America

PATENT NO 12218184
APP PUB NO 20230387189A1
SERIAL NO

17824924

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Abstract

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A semiconductor structure includes a capacitor structure and a contact structure. The capacitor structure includes an electrode layer, a protective dielectric layer, and a capacitor dielectric layer. The protective dielectric layer covers a top surface of the electrode layer. The capacitor dielectric layer is on the protective oxide layer. The contact structure penetrates the protective oxide layer and electrically connects to the electrode layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chu, Jui-Lin Hsinchu, TW 7 72
Li, Ching I Tainan, TW 38 25
Wang, Szu-Yu Hsinchu, TW 51 509

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