Method for correcting mask pattern, apparatus for correcting mask pattern and method for manufacturing semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
Feb 4, 2025
Grant Date -
Dec 1, 2022
app pub date -
Jan 11, 2022
filing date -
Jan 11, 2022
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for correcting a mask patter includes: acquiring an initial pattern of a mask, the initial pattern including a scribe line area and die areas which are spaced, and the scribe line area is located between two adjacent die areas, each of the die areas includes at least one die sub-area and at least one first sub-test element group (TEG) area, and the scribe line area includes scribe line sub-areas and second sub-TEG areas, the first sub-TEG area and the second sub-TEG area are adjacent to each other, and the first sub-TEG area and the second sub-TEG area constitute a TEG area; performing an optical proximity correction (OPC) on an area of the initial pattern excluding TEG areas, so as to acquire a final pattern.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully