Semiconductor detector

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12211949
APP PUB NO 20240038921A1
SERIAL NO

18486114

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Abstract

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A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.; NATIONAL TSING HUA UNIVERSITY

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
King, Ya-Chin Taipei, TW 91 428
Lin, Burn Jeng Hsinchu, TW 127 3214
Lin, Chrong Jung Hsinchu, TW 49 702
Wang, Shi-Jiun Changhua, TW 3 1

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