Semiconductor device including gate oxide layer

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12211915
APP PUB NO 20230207647A1
SERIAL NO

18115780

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Importance

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Abstract

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A semiconductor device includes a semiconductor substrate, a first gate oxide layer, and a first source/drain doped region. The first gate oxide layer is disposed on the semiconductor substrate, and the first gate oxide layer includes a main portion and an edge portion having a sloping sidewall. The first source/drain doped region is disposed in the semiconductor substrate and located adjacent to the edge portion of the first gate oxide layer. The first source/drain doped region includes a first portion and a second portion. The first portion is disposed under the edge portion of the first gate oxide layer in a vertical direction, and the second portion is connected with the first portion.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Jung New Taipei, TW 37 418
Hung, Yu-Hsiang Tainan, TW 95 643
Li, Ming-Chi Tainan, TW 5 1
Lin, Chih-Mou Tainan, TW 6 1
Lin, Yu-Hsiang Kaohsiung, TW 161 478
Shih, Tzu-Lang Tainan, TW 5 1
Tsai, Ming-Hua Tainan, TW 25 18

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