Silicon carbide semiconductor device and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12211902
APP PUB NO 20220059657A1
SERIAL NO

17520882

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Abstract

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In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.

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Patent Owner(s)

  • DENSO CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kato, Takehiro Toyota, JP 29 139
Noborio, Masato Kariya, JP 12 44
Yamashita, Yusuke Nagakute, JP 131 632

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