Integrated circuits and methods for forming thin film crystal layers
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United States of America
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Jan 28, 2025
Grant Date -
May 12, 2022
app pub date -
Jan 25, 2022
filing date -
Jan 25, 2022
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Abstract
An aspect of the disclosure relates to an integrated circuit. The integrated circuit includes a first electrically conductive structure, a thin film crystal layer located on the first electrically conductive structure, and a second electrically conductive structure including metal e.g. copper. The second electrically conductive structure is located on the thin film crystal layer. The first electrically conductive structure is electrically connected to the second electrically conductive structure through the thin film crystal layer. The thin film crystal layer may be provided as a copper diffusion barrier.
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