Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer

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United States of America

PATENT NO 12211703
APP PUB NO 20230395394A1
SERIAL NO

18236434

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Abstract

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A method of forming a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate; increasing the porosity of the first semiconductor layer; first annealing the first semiconductor layer in an atmosphere including an inert gas; forming a second semiconductor layer on the first semiconductor layer; and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer. Additional methods of forming a semiconductor device are described.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Breymesser, Alexander Villach, AT 42 477
Goller, Bernhard Villach, AT 60 218
Kuenle, Matthias Villach, AT 24 90
Oefner, Helmut Zorneding, DE 26 111
Santos, Rodriguez Francisco Javier Villach, AT 124 603
Schulze, Hans-Joachim Taufkirchen, DE 693 4306
Voss, Stephan Munich, DE 42 216

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