Method of manufacturing semiconductor device capable of controlling film thickness distribution

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12211689
APP PUB NO 20210202232A1
SERIAL NO

17204201

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Abstract

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Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.

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Patent Owner(s)

Patent OwnerAddress
KOKUSAI ELECTRIC CORPORATION3-4 KANDAKAJI-CHO CHIYODA-KU TOKYO 1010045 ?1010045

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishida, Keigo Toyama, JP 23 53
Ozaki, Takashi Toyama, JP 136 3577
Sasaki, Takafumi Toyama, JP 96 1117

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