Apparatus and method for plasma etching

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12211672
APP PUB NO 20240258084A1
SERIAL NO

18632060

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Abstract

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An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 443-742

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Jewoo Hwaseong-si, KR 6 2
Kim, Kyohyeok Seoul, KR 7 13
Kim, Taehwa Hwaseong-si, KR 3 0
Park, Haejoong Yongin-si, KR 5 5
Sun, Jongwoo Hwaseong-si, KR 24 21

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