Signal generator for controlling timing of signal in memory device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12211586
APP PUB NO 20240021225A1
SERIAL NO

18476030

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit and a control signal generator. The first modulation circuit is coupled to the first memory subarray. The second memory subarray is located between the first memory subarray and the first modulation circuit along a direction. The second modulation circuit is coupled to the second memory subarray. The control signal generator is configured to generate a first control signal to trigger the first modulation circuit according to a first length of the first memory subarray along the direction, and configured to generate a second control signal to trigger the second modulation circuit according to a second length of the second memory subarray along the direction.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.; TSMC NANJING COMPANY, LIMITED; TSMC CHINA COMPANY, LIMITED

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ming-Hung Tainan, TW 64 267
Kong, Lu-Ping Nanjing, CN 12 3
Wan, He-Zhou Shanghai, CN 54 55
Yang, Xiu-Li Shanghai, CN 35 21
Ye, Mu-Yang Nanjing, CN 9 4

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