Memory device and program operation thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12211554
APP PUB NO 20230035225A1
SERIAL NO

17967509

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Abstract

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A memory device, a system, and a method for operating the memory device are provided. The memory device includes a first memory string and a peripheral circuit. The first memory string includes a first drain, a first drain select gate (DSG) transistor, a first drain dummy transistor between the first drain and the first DSG transistor, and a plurality of first memory cells. A first drain dummy line is coupled to the first drain dummy transistor, and a first DSG line is coupled to the first DSG transistor. The peripheral circuit is configured to, in a program operation, apply a first DSG voltage to the first DSG line and apply a first drain dummy line voltage to the first drain dummy line to turn on the first drain dummy transistor. The first drain dummy line voltage is greater than the first DSG voltage.

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Patent Owner(s)

Patent OwnerAddress
YANGTZE MEMORY TECHNOLOGIES CO LTD430205 NO 88 FUTURE THIRD ROAD DONGHU NEW TECHNOLOGY DEVELOPMENT ZONE WUHAN CITY HUBEI PROVINCE WUHAN CITY HUBEI PROVINCE 430205

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Kaijin Wuhan, CN 6 3
Liu, Gang Wuhan, CN 625 6202
Lyu, Jin Wuhan, CN 6 11

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