Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling

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United States of America

PATENT NO 12211535
APP PUB NO 20230307028A1
SERIAL NO

17656310

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Abstract

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A magnetoresistive memory cell includes a magnetoresistive layer stack containing a reference layer, a nonmagnetic spacer layer, and a free layer. A ferroelectric material layer having two stable ferroelectric states is coupled to a strain-modulated ferromagnetic layer to alter a sign of magnetic exchange coupling between the strain-modulated ferromagnetic layer and the free layer. The strain-modulated ferromagnetic layer may be the reference layer or a perpendicular magnetic anisotropy layer that is located proximate to the ferroelectric material layer. The magnetoresistive memory cell may be configured as a three-terminal device or as a two-terminal device, and may be configured as a tunneling magnetoresistance (TMR) device or as a giant magnetoresistance (GMR) device.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES INC951 SANDISK DRIVE LEGAL DEP MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bertero, Gerardo Fremont, US 16 855
Kalitsov, Alan San Jose, US 30 170
Kaushik, Ananth Santa Clara, US 2 0
Stewart, Derek Livermore, US 26 143

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