Photoresist removal method and photoresist removal system

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United States of America

PATENT NO 12210288
APP PUB NO 20220317573A1
SERIAL NO

17576774

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Abstract

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This application relates to a photoresist removal method, including: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with a new first organic solvent in response to an end of the first duration; performing, in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer in response to an end of the second duration; and drying the target wafer with the solvent removed by simultaneous centrifugal drying and gas purging to obtain the target wafer with the photoresist removed.

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Patent Owner(s)

Patent OwnerAddress
TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITEDSHENZHEN GUANGDON 518044

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dai, Maochun Shenzhen, CN 9 2
Huai, Sainan Shenzhen, CN 14 4
Zhang, Wenlong Shenzhen, CN 64 78
Zhao, Zhongping Shenzhen, CN 8 11
Zhou, Yu Shenzhen, CN 454 2834

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