MEMS device built using the BEOL metal layers of a solid state semiconductor process

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United States of America

PATENT NO 12209009
APP PUB NO 20230406693A1
SERIAL NO

18242267

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Abstract

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A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

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Patent Owner(s)

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NANUSENS SLCERDANYOLA DEL VALLÈS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Silvestre, Josep Montanyà Cerdanyola del Vallès, ES 6 4

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