Same level MRAM stacks having different configurations

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United States of America Patent

PATENT NO 12207477
APP PUB NO 20220302207A1
SERIAL NO

17205190

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Abstract

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A semiconductor device is provided. The semiconductor device includes a base layer, a first MRAM device formed on the base layer, and a second MRAM device formed on the base layer. The first MRAM device has a different performance characteristic than the second MRAM device.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Houssameddine, Dimitri White Plains, US 81 620
Mignot, Yann Slingerlands, US 128 357
van, der Straten Oscar Guilderland Center, US 196 1021

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