Crystalline oxide thin film, multilayer body and thin film transistor

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United States of America Patent

PATENT NO 12205992
SERIAL NO

17598817

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Abstract

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A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D1 is in a range from 0.05 μm to 0.5 μm.

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Patent Owner(s)

Patent OwnerAddress
IDEMITSU KOSAN CO LTD2-1 OTEMACHI 1-CHOME CHIYODA-KU TOKYO 1008321 ?1008321

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inoue, Kazuyoshi Sodegaura, JP 118 4436
Kawashima, Emi Sodegaura, JP 18 59
Oyama, Masashi Sodegaura, JP 7 20
Shibata, Masatoshi Sodegaura, JP 45 291

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