Method of processing a semiconductor wafer, semiconductor die, and method of producing a semiconductor module
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United States of America Patent
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Jan 21, 2025
Grant Date -
Jun 22, 2023
app pub date -
Dec 20, 2021
filing date -
Dec 20, 2021
priority date (Note) -
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Abstract
A method of processing a semiconductor wafer includes: forming an electronic device at each die location of the semiconductor wafer; partially forming a frontside metallization over a frontside of the semiconductor wafer at each die location; partially forming a backside metallization over a backside of the semiconductor wafer at each die location; and after partially forming both the frontside metallization and the backside metallization but without completing either the frontside metallization or the backside metallization, singulating the semiconductor wafer between the die locations to form a plurality of individual semiconductor dies, wherein the partially formed frontside metallization and the partially formed backside metallization have a same composition. Semiconductor dies and methods of producing semiconductor modules are also described.
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