Method of removing a substrate with a cleaving technique

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United States of America Patent

PATENT NO 12205847
APP PUB NO 20230005793A1
SERIAL NO

17945717

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Abstract

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A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

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Patent Owner(s)

  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gandrothula, Srinivas Santa Barbara, US 20 7
Kamikawa, Takeshi Kyoto, JP 124 1125
Li, Hongjian Goleta, US 24 39

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