Nanostructure and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 12205822
APP PUB NO 20220319859A1
SERIAL NO

17450123

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Implementations described herein provide a method of forming a semiconductor device. The method includes forming a nanostructure having a first set of layers of a first material and a second set of layers, alternating with the first set of layers, having a second material. The method further includes depositing a hard mask on a top layer of the first set of layers, the hard mask including a first hard mask layer on the top layer of the first set of layers and a second hard mask layer on the first hard mask layer. The method also includes depositing elements of a cladding structure on sidewalls of the nanostructure and the hard mask. The method further includes removing a top portion of the cladding structure. The method further includes removing the second hard mask layer after removing the top portion of the cladding structure.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chao, Chia-Cheng Hsinchu, TW 20 6
Huang, Hsin-Chieh Taoyuan, TW 118 1056
Wang, Yu-Wen New Taipei, TW 44 74

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