Memory system and operating method of memory system

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United States of America Patent

PATENT NO 12205670
APP PUB NO 20230317124A1
SERIAL NO

17821187

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Abstract

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Memory systems and operating method of a memory system are provided. The memory system utilized for performing a computing-in-memory (CiM) operation comprises a memory array and a processing circuit. The memory array comprises a plurality of memory cells. The processing circuit is coupled to the memory array and comprises a programming circuit and a control circuit. The programming circuit is coupled to the memory array and configured to perform a write operation for programming electrical characteristics of the memory cells. The control circuit is coupled to the programming circuit and configured to: receive a plurality of weight data corresponding to a plurality of weight values; and control the write operation performed by the programming circuit, so the electrical characteristics of the memory cells are programmed following a sequential order of the weight values.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Meng-Fan Taichung, TW 157 744
Khwa, Win-San Taipei, TW 78 54
Lee, Tung Ying Hsinchu, TW 151 2924
Wu, Ping-Chun Hsinchu, TW 13 1

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