Memory circuit and method of operating same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 12205664
APP PUB NO 20230410854A1
SERIAL NO

18157240

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Abstract

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A memory circuit includes a first and a second bit line coupled to a set of memory cells, a local input output circuit including a first and a second data line, a first control circuit configured to generate a first sense amplifier signal and a second sense amplifier signal, a second control circuit configured to generate a first control signal in response to at least a second control signal or a third control signal, a switching circuit configured to transfer a first and second input signal to the corresponding first and second data line during a write operation, and to electrically isolate the first and second data line from the first and second input signal during a read operation, and a first latch configured as a sense amplifier, during the read operation, and configured as a write-in latch, during the write operation.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Cheng Hung Hsinchu, TW 175 913
Liao, Hung-Jen Hsinchu, TW 245 1267
Shieh, Hau-Tai Hsinchu, TW 82 237
Yu, Hua-Hsin Hsinchu, TW 13 19

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