Optical proximity correction method and mask manufacturing method of lithography system

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United States of America

PATENT NO 12204241
APP PUB NO 20220155674A1
SERIAL NO

17462401

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Abstract

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An optical proximity correction method of a lithography system includes dividing a transmission cross coefficient (TCC) for each slit region; generating an optical proximity correction (OPC) model to which the divided TCC is applied; measuring an apodization value for each slit position; fitting critical dimension (CD) data for each slit position to a simulation CD of the OPC model; and correcting the OPC model using the fitted CD data.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jung, Kangmin Seoul, KR 6 20
Park, Sangwook Hwaseong-si, KR 120 694

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