Methods for shaping magnetic fields during semiconductor processing

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United States of America Patent

PATENT NO 12203163
APP PUB NO 20220380888A1
SERIAL NO

17334630

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bangalore, Umesh Suhas Sunnyvale, US 6 0
Kalathiparambil, Kishor Kumar Santa Clara, US 8 12
Kothnur, Prashanth San Jose, US 35 179
Lei, Wei Campbell, US 68 1081
Pethe, Shirish A Cupertino, US 8 4
Riker, Martin Lee Milpitas, US 49 688
Samant, Sushil Arun Thane, IN 2 3
Tomko, Andrew Redwood City, US 5 2
Yoshidome, Goichi Albany, US 33 671
Zhang, Fuhong San Jose, US 41 840

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