Dielectric gap-filling process for semiconductor device
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United States of America
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Jan 14, 2025
Grant Date -
Nov 9, 2023
app pub date -
Jul 13, 2023
filing date -
Jul 13, 2023
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Abstract
A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.
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