Method for manufacturing semiconductor device

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United States of America

PATENT NO 12198930
APP PUB NO 20240055254A1
SERIAL NO

17630674

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Abstract

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A method for manufacturing a semiconductor device. A photolithographic coating, including a first film, a photolithographic film, and a second film, is formed on the to-be-connected structure. Refractive indexes of the first film and the second film are smaller than 1, so that the photolithographic coating forms an optical structure with a high reflection coefficient. The photolithographic coating is exposed to a light having a target wavelength through a mask. The to-be-connected structure is reflected in the photolithographic coating, and hence serves as another mask and is imaged to the photolithographic film. A pattern of the mask is simultaneously imaged to the photolithographic film. That is, both the to-be-connected structure and the pattern of the mask are imaged to a target region of the photolithographic film, and the target region corresponds to the to-be-connected structure.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 BEIJING CITY BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
He, Jianfang Beijing, CN 3 1
Ma, Le Beijing, CN 10 27
Song, Zhen Beijing, CN 201 1957
Su, Yajuan Beijing, CN 4 2
Wei, Yayi Beijing, CN 23 112
Zhang, Libin Beijing, CN 38 289

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