Integrated III-V / silicon optoelectronic device and method of manufacture thereof
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United States of America
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Jan 14, 2025
Grant Date -
Jun 17, 2021
app pub date -
Nov 25, 2020
filing date -
Nov 25, 2020
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Abstract
An optoelectronic device. The optoelectronic device comprising: a silicon-on-insulator platform, including: a silicon waveguide located within a silicon device layer of the platform, a substrate, and an insulator layer between the substrate and the silicon device layer; and a III-V semiconductor based device, located within a cavity of the silicon-on-insulator platform and including a III-V semiconductor based waveguide, coupled to the silicon waveguide; wherein the III-V semiconductor based device includes a heater and one or more electrical traces, connected to the heater, wherein the one or more electrical traces extend from the III-V semiconductor based device to respective contact pads on the silicon-on-insulator platform.
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