Silicon photonic integrated circuits on substrates with structured insulators having specific thicknesses in separate zones

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12197004
APP PUB NO 20220413213A1
SERIAL NO

17358912

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Abstract

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Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATION2200 MISSION COLLEGE BOULEVARD SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Appleton, Randal Albuquerque, US 1 1
Favaro, Michael Edgewood, US 1 1
Frish, Harel Albuquerque, US 47 182
Harrison, Wesley Portland, US 3 15
Heck, John Berkeley, US 114 2061
Keener, Joshua Albuquerque, US 3 2
Mahalingam, Hari San Jose, US 24 15
Meister, Stefan Portland, US 18 73
Rong, Haisheng Pleasanton, US 67 756
Sochava, Sergei Sunnyvale, US 30 954

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